MOSFET Full Form is Metal Oxide Semiconductor Field Effect Transistor. Here we will be discussing MOSFET VI Characteristics, symbol and its classification. They are broadly classified into two types namely enhancement Type and depletion type MOSFET. In an enhancement type MOSFET channel has to be induced for the device to conduct, which is achieved by […]
Transistors
VI Characteristics of IGBT and it’s Working Principle
The VI characteristics of IGBT is as shown in Figure. In the forward direction, they are similar to those of bipolar transistors. The only difference here is that the controlling parameter is the gate to source voltage Vgs and the parameter being controlled is the drain current. The working principle of IGBT is based on […]
IGBT Full Form, Symbol, Construction, Working and Applications
An Insulated Gate Bipolar Transistor in short IGBT is a three-terminal semiconductor device it is a hybrid of MOSFET and BJT for high efficiency and fast switching. The power BJT has the advantage of low on state power dissipation, but it cannot be switched at faster rates due to longer turn-off time, whereas MOSFETs have […]